Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices

Roland Rupp; Werner Schustereder; Tobias Höchbauer; Ronny Kern; Michael Rüb; Constantin Csato; Florian Krippendorf; Shavkat Akhmadaliev; Johannes von Borany

doi:10.4028/www.scientific.net/MSF.858.531

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Alternative Highly Homogenous Drift Layer Doping...

Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices

Abstract:

A new method for homogenous drift layer doping is introduced. Instead of in-situ doping during epitaxial growth a subsequent high energy ion implant step is used to dope the drift layer of 650V MPS (Merged-PN-Schottky) diodes. In order to avoid multiple implant steps with various energies for emulating a box-like doping profile, a novel “energy filter” membrane is used to transform the monochromatic ion beam to a beam with a continuous energy spectrum suited for box-like doping. The electrical characteristics of the diodes manufactured by this means show a very homogenous blocking behavior on wafer level, however the expected improved homogeneity in differential resistance of the wafers could not be confirmed by wafer level measurements. More work is needed to understand this discrepancy between experiment and theory.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

531-534

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.531

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Online since:

May 2016

Authors:

Roland Rupp*, Werner Schustereder, Tobias Höchbauer, Ronny Kern, Michael Rüb, Constantin Csato, Florian Krippendorf, Shavkat Akhmadaliev, Johannes von Borany

Keywords:

Doping, Drift Layer, Epitaxy, Ion Implantation

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