Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal

Fulvio Mazzamuto; Sebastien Halty; Yoshihiro Mori

doi:10.4028/www.scientific.net/MSF.858.540

Paper Titles

1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
p.523

Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC
p.527

Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
p.531

High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing
p.535

Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal
p.540

Warpage Structure of 4H-SiC after Implantation and Annealing Processes
p.544

Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing
p.549

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase
p.553

Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air
p.557

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Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal

Abstract:

We have demonstrated the possibility for epitaxial regrowth of crystalline SiC by laser melt annealing. The quality of the recrystallization is analyzed by XTEM, EELS, electron diffraction and XRD. The annealing guarantees a uniform activation achieved both in melting and solid phase. Carbon graphitization on the top surface and a crystallized silicon layer below is observed as an effect of the high temperature and the melting phase.