Low Thermal Budget Ohmic Contact Formation by Laser Anneal

Fulvio Mazzamuto; Sebastien Halty; Hideaki Tanimura; Yoshihiro Mori

doi:10.4028/www.scientific.net/MSF.858.565

Paper Titles

Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing
p.549

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase
p.553

Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air
p.557

Ohmic Contact for Silicon Carbide by Carbon Nanotubes
p.561

Low Thermal Budget Ohmic Contact Formation by Laser Anneal
p.565

Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures
p.569

4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
p.573

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications
p.577

Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps
p.585

HomeMaterials Science ForumMaterials Science Forum Vol. 858Low Thermal Budget Ohmic Contact Formation by...

Low Thermal Budget Ohmic Contact Formation by Laser Anneal

Abstract:

In this work, we demonstrate the possibility to achieve an ohmic contact using a low thermal budget applicable to backside processing after wafer thinning. The process window for laser annealing as a function of the thinning process is investigated. By laser melt annealing, we demonstrate the possibility for different silicide phases from pure nickel deposition on thinned 4H-SiC, formation of uniform carbon nanoclusters at the metal/SiC interface and recovery of thinning-induced defects. This has been demonstrated as a function of different thinning process and surface conditions.