4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts

Hirofumi Nagatsuma; Shin Ichiro Kuroki; Wijemuni De Silva; Seiji Ishikawa; Tomonori Maeda; Hiroshi Sezaki; Takamaro Kikkawa; Mikael Östling; Carl Mikael Zetterling

doi:10.4028/www.scientific.net/MSF.858.573

Paper Titles

Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air
p.557

Ohmic Contact for Silicon Carbide by Carbon Nanotubes
p.561

Low Thermal Budget Ohmic Contact Formation by Laser Anneal
p.565

Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures
p.569

4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
p.573

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications
p.577

Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps
p.585

Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.591

Negative Bias Temperature Instability of SiC MOSFET
p.595

HomeMaterials Science ForumMaterials Science Forum Vol. 8584H-SiC nMOSFETs with As-Doped S/D and NbNi...

4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts

Abstract:

4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold voltage Vth was designed to be 3.0 V by TCAD simulation, and was 3.6 – 3.8 V at the fabricated devices. On / off ratio was approximately 10⁵.

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Silicon Carbide and Related Materials 2015

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Materials Science Forum (Volume 858)

Pages:

573-576

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.573

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Online since:

May 2016

Authors:

Hirofumi Nagatsuma*, Shin Ichiro Kuroki, Wijemuni De Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Mikael Östling, Carl Mikael Zetterling

Keywords:

4H-SiC, Carbon Aggregation, Harsh Environment, nMOSFET

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