Negative Bias Temperature Instability of SiC MOSFET

Cheng Tyng Yen; Hsiang Ting Hung; Chien Chung Hung; Chwan Ying Lee; Heng Yuan Lee; Lurng Shehng Lee; Yao Feng Huang; Chi Yin Cheng; Pei Ju Chuang; Fu Jen Hsu

doi:10.4028/www.scientific.net/MSF.858.595

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Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
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Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors
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Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Negative Bias Temperature Instability of SiC...

Negative Bias Temperature Instability of SiC MOSFET

Abstract:

MOSFETs and MOS capacitors (MOSCAPs) have been fabricated on Si-face of 4H-SiC to investigate the negative bias temperature instability (NBTI) characteristics of SiC MOSFETs. The shifts of threshold voltage of MOSFETs ranged from -216mV to -1257mV after stressed by 1000sec of -1V to -15V gate bias, correspondingly. The negative shift of the threshold voltage indicated that there were positive charges piled up at or near the oxide/SiC interface. In the mean time, the flat-band voltage shifts of SiC MOSCAPs using the same oxide after stressed by -15V bias for 28800 sec at 175°C were negligible, due to insufficient supply of holes, thus suggesting that the NBTI observed in this study was primarily participated by hole trapping, instead of electron emission. The time evolution of DV_th induced by negative bias stress was found to saturate quickly, also suggesting that positive charges were primarily coming from trapping of pre-existing near-interface oxide traps, instead of generation of interface traps. The DV_thinduced by negative bias stress was lower at higher temperature which might be attributed to faster recovery of hole trapping at elevated temperature.

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Materials Science Forum (Volume 858)

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595-598

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.595

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Online since:

May 2016

Authors:

Cheng Tyng Yen*, Hsiang Ting Hung, Chien Chung Hung, Chwan Ying Lee, Heng Yuan Lee, Lurng Shehng Lee, Yao Feng Huang, Chi Yin Cheng, Pei Ju Chuang, Fu Jen Hsu

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4H-SiC, MOSFET, Negative Bias Temperature Instability (NBTI), Reliability, Threshold Voltage

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