Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Geon Woo Kim; Ryo Arai; S.J. Ma; Mitsuo Okamoto; Hironori Yoshioka; Shinsuke Harada; Takahiro Makino; Takeshi Ohshima; Takahide Umeda

doi:10.4028/www.scientific.net/MSF.858.591

Paper Titles

Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures
p.569

4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
p.573

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications
p.577

Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps
p.585

Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.591

Negative Bias Temperature Instability of SiC MOSFET
p.595

Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices
p.599

Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors
p.603

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs
p.607

HomeMaterials Science ForumMaterials Science Forum Vol. 858Relationship between C-Face Defects and...

Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Abstract:

We present EDMR (electrically detected magnetic resonance) observations on “C-face defects” in C-face 4H-SiC MOSFETs. We found that negative threshold-voltage shifts of C-face MOSFETs are increased in association with EDMR signals of C-face defects as well as with the dissociation of hydrogen atoms induced by gamma-ray irradiation.