An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

Gheorghe Pristavu; Gheorghe Brezeanu; Marian Badila; Florin Draghici; Razvan Pascu; Florea Craciunoiu

doi:10.4028/www.scientific.net/MSF.858.577

Paper Titles

Ohmic Contact for Silicon Carbide by Carbon Nanotubes
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Low Thermal Budget Ohmic Contact Formation by Laser Anneal
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Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures
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4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
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An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications
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Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps
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Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
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Negative Bias Temperature Instability of SiC MOSFET
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Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 858An Investigation of SiC Schottky Contact Barrier...

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

Abstract:

This paper proposes a method of characterizing silicon carbide Schottky diodes with inhomogeneous contacts in temperature sensing applications. Using the energy activation technique, temperature intervals where the effective barrier height is constant are determined. Unlike the conventional barrier which increases with temperature for inhomogeneous diodes, the effective barrier has physical meaning and can be used for sensor performance evaluation. The utility of effective barrier analysis is confirmed on fabricated Ni/4H-SiC Schottky diodes with different annealing conditions and different degrees of barrier non-uniformity. The good agreement between calculated and experimental data proves the suitable behavior of inhomogeneous diodes as sensors for different temperature ranges.

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Materials Science Forum (Volume 858)

Pages:

577-581

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.577

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Online since:

May 2016

Authors:

Gheorghe Pristavu*, Gheorghe Brezeanu, Marian Badila, Florin Draghici, Razvan Pascu, Florea Craciunoiu

Keywords:

Barrier Non-Uniformity, Ni-Contacts, Schottky Diode, Temperature Dependence

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