Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs

Katsuhiro Kutsuki; Sachiko Kawaji; Yukihiko Watanabe; Masatoshi Tsujimura; Toru Onishi; Hirokazu Fujiwara; Kensaku Yamamoto; Takashi Kanemura

doi:10.4028/www.scientific.net/MSF.858.607

Paper Titles

Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.591

Negative Bias Temperature Instability of SiC MOSFET
p.595

Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices
p.599

Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors
p.603

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs
p.607

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors
p.611

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors
p.615

Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance
p.619

High Temperature Nitridation of 4H-SiC MOSFETs
p.623

HomeMaterials Science ForumMaterials Science Forum Vol. 858Impact of Al Doping Concentration at Channel...

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs

Abstract:

The effect of Al doping concentration (N_A) at channel regions ranging from 1.0×10¹⁷ to 4.0×10¹⁷ cm^-3 on the effective channel mobility of electron (μ_eff) and the threshold voltage (V_th) instability under the positive bias-temperature-stress conditions has been investigated througu the use of trench-gate 4H-SiC MOSFETs with m-face (1-100) channel regions. It was found that μ_eff degraded with an increase in N_A. On the other hand, the increase of N_A enlarged the V_th instability. These results indicate that N_A has a large impact not only on the V_th value but also on the channel resistance and reliability in 4H-SiC trench MOSFETs.

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Materials Science Forum (Volume 858)

Pages:

607-610

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.607

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Online since:

May 2016

Authors:

Katsuhiro Kutsuki*, Sachiko Kawaji, Yukihiko Watanabe, Masatoshi Tsujimura, Toru Onishi, Hirokazu Fujiwara, Kensaku Yamamoto, Takashi Kanemura

Keywords:

Bias Temperature Stress, Doping Concentration, Interface States, Mobility, Threshold Voltage Instability, Trench MOSFET

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