Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance

Yohei Kagoyama; Mitsuo Okamoto; Shinsuke Harada; Ryo Arai; Takahide Umeda

doi:10.4028/www.scientific.net/MSF.858.619

Paper Titles

Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors
p.603

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs
p.607

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors
p.611

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors
p.615

Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance
p.619

High Temperature Nitridation of 4H-SiC MOSFETs
p.623

Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures
p.627

Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
p.631

Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
p.635

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Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance

Abstract:

We studied interface defects of C-face 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of electrically-detected-magnetic-resonance (EDMR) spectroscopy. EDMR measurements were carried out on opposite types of C-face MOSFETs, which were prepared by dry oxidation and wet oxidation, and we found EDMR signals of interface defects from both the MOSFETs. Judging from their spectroscopic features, the interface signals of the two MOSFETs are assigned to be the same type, and we call them “C-face defects.” The density of C-face defects was found to be larger in the dry-oxide MOSFETs than in the wet-oxide MOSFETs. It is also revealed that part of C-face defects in wet-oxide MOSFETs are coupled with hydrogen atoms.