Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures

Atthawut Chanthaphan; Yen Hung Cheng; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.858.627

Paper Titles

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors
p.611

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors
p.615

Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance
p.619

High Temperature Nitridation of 4H-SiC MOSFETs
p.623

Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures
p.627

Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
p.631

Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
p.635

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment
p.639

Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance
p.643

HomeMaterials Science ForumMaterials Science Forum Vol. 858Improvement of SiO2/4H-SiC Interface Quality by...

Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures

Abstract:

The efficient and practical method for SiO₂/4H-SiC interface improvement using post-oxidation annealing (POA) in pure N₂ ambient was studied by means of x-ray photoelectron spectroscopy (XPS) analysis and electrical characterization. SiC-MOS capacitors with slope-shaped thermal oxides were used to investigate optimal conditions for interface nitridation. It was found that the amount of nitrogen atoms incorporated into the interfaces increased when raised the annealing temperature up to 1400°C, and thin oxide (< 30 nm) was used. Furthermore, N₂-POA at 1400°C was proven to be very promising as equivalent to NO-POA in terms of reduced interface state density of SiC-MOS devices.

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Silicon Carbide and Related Materials 2015

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Materials Science Forum (Volume 858)

Pages:

627-630

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.627

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Online since:

May 2016

Authors:

Atthawut Chanthaphan*, Yen Hung Cheng, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Keywords:

4H-SiC, Interface Nitridation, Interface Quality, MOS, Nitrogen Gas, Post Oxidation Annealing (POA)

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References

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