Influence of Oxide Processing on the Defects at the SiC-SiO2 Interface Measured by Electrically Detected Magnetic Resonance

Gernot Gruber; Thomas Aichinger; Gregor Pobegen; Dethard Peters; Markus Koch; Peter Hadley

doi:10.4028/www.scientific.net/MSF.858.643

Paper Titles

Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures
p.627

Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
p.631

Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
p.635

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment
p.639

Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance
p.643

Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
p.647

High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere
p.651

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
p.655

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
p.659

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Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance

Abstract:

Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.