Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

Maria Cabello; Matthieu Florentin; Mihaela Alexandru; Bernd Schmidt; Jose Rebollo; Josep Montserrat; José Millan; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.858.655

Paper Titles

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment
p.639

Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance
p.643

Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
p.647

High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere
p.651

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
p.655

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
p.659

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
p.663

Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si
p.667

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation
p.671

HomeMaterials Science ForumMaterials Science Forum Vol. 858Irradiation and Post-Annealed nMOSFETs with Al...

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

Abstract:

The electrical behaviour of irradiated and post-irradiation annealed nMOSFETs with an implanted p-type body and having a N₂O oxynitrided gate oxide is analysed in this work. This study reveals the existence of a “threshold fluence” which might change the predominant SiO₂/SiC interface charge trapping type from donors to acceptors at a given energy. The irradiation fluence and energy limit that guaranty a normal or improved operation of the MOSFETs are also given.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

655-658

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.655

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Online since:

May 2016

Authors:

Maria Cabello, Matthieu Florentin*, Mihaela Alexandru, Bernd Schmidt, Jose Rebollo, Josep Montserrat, José Millan, Philippe Godignon

Keywords:

Charge Trapping, Electron, Implantation, Irradiation, Mobility, Proton, SiC Interface, SiC MOSFET, SiO₂ Interface, Time Bias Stress Instability

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