X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Marilena Vivona; Patrick Fiorenza; Salvatore Di Franco; Claude Marcandella; Marc Gaillardin; Sylvain Girard; Fabrizio Roccaforte

doi:10.4028/www.scientific.net/MSF.858.659

Paper Titles

Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance
p.643

Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
p.647

High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere
p.651

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
p.655

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
p.659

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
p.663

Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si
p.667

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation
p.671

Alkali Metal Re-Distribution after Oxidation of 4H-SiC
p.677

HomeMaterials Science ForumMaterials Science Forum Vol. 858X-Ray Irradiation on 4H-SiC MOS Capacitors...

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Abstract:

The overall radiation response to X-ray exposure of metal-oxide-semiconductor (MOS) capacitors, subjected to two different post-deposition-annealing (PDA) processes in N₂O or POCl₃ atmospheres, was investigated by capacitance-voltage (C-V) analyses. The production rate and saturation density of electrically active defects, different for the two oxides, demonstrated an additional contribution to the defects formation coming from the annealing treatements. The higher susceptibility of the POCl₃-annealed oxide respect to the N₂O annealed is discussed.

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Materials Science Forum (Volume 858)

Pages:

659-662

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.659

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Online since:

May 2016

Authors:

Marilena Vivona*, Patrick Fiorenza, Salvatore Di Franco, Claude Marcandella, Marc Gaillardin, Sylvain Girard, Fabrizio Roccaforte

Keywords:

4H-SiC, Charge Trapping, Irradiation, Radiation Hardness, X-Ray

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