High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

Aleksey I. Mikhaylov; Sergey A. Reshanov; Adolf Schöner; Alexey V. Afanasyev; Victor V. Luchinin; Lars Knoll; Renato A. Minamisawa; Giovanni Alfieri; Holger Bartolf

doi:10.4028/www.scientific.net/MSF.858.651

Paper Titles

Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
p.635

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment
p.639

Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance
p.643

Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
p.647

High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere
p.651

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
p.655

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
p.659

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
p.663

Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si
p.667

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High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere

Abstract:

High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in N₂O. The maximum field-effect mobility of 81 and 114 cm²/Vs were achieved, respectively. The MOSFET fabrication was done on lightly aluminium doped p-type epitaxial layers and on heavily aluminium implanted p-well.