Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment

Hidenori Kitai; Tomoaki Hatayama; Hideto Tamaso; Shinaya Kyogoku; Takeyoshi Masuda; Hiromu Shiomi; Shinsuke Harada; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.858.639

Paper Titles

High Temperature Nitridation of 4H-SiC MOSFETs
p.623

Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures
p.627

Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
p.631

Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
p.635

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment
p.639

Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance
p.643

Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
p.647

High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere
p.651

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
p.655

HomeMaterials Science ForumMaterials Science Forum Vol. 858Systematic Investigation of 4H-SiC Trench...

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment

Abstract:

We have systematically investigated the trench properties of 4H-SiC for p-type channel doping level formed by epitaxial growth, crystallographic plane, and MOS interface treatment. Our results show that the channel mobilities on the (1-100), (11-20), (-1100), and (-1-120) planes gradually decreased in the range from 1 × 10¹⁶ to 1 × 10¹⁷ cm^-3 as the epitaxial channel concentration increased. An inevitable tradeoff existed between channel mobility (field-effect mobility, µ_FE) and threshold voltage (V_th) in trench MOSFETs. Furthermore, the maximum µ_FE at a channel concentration of 1 × 10¹⁷ cm^-3 was 95 cm²·V^-1·s^-1 on the (11-20) plane with wet + hydrogen (H₂) annealing, 83 cm²·V^-1·s^-1 on the (1-100) plane with wet + H₂ annealing and 57 cm²·V^-1·s^-1 on the (1-100) plane with nitric oxide annealing.