Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment

Zhao Yang Peng; Yi Yu Wang; Hua Jun Shen; Yun Bai; Yi Dan Tang; Jia Wu; Chengzhan Li; Kean Liu; Xin Yu Liu

doi:10.4028/www.scientific.net/MSF.858.647

Paper Titles

Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
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Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
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Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment
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Influence of Oxide Processing on the Defects at the SiC-SiO₂ Interface Measured by Electrically Detected Magnetic Resonance
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Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment
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High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere
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Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
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X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
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Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Investigation of the Interface Quality and...

Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment

Abstract:

Effects of NO and forming gas annealing treatment on the interface quality and reliability of 4H-SiC MOS were systematically studied by low temperature conductance measurements in combination with time-zero dielectric breakdown and time-dependent dielectric breakdown methods. The interface trap density (D_it) showed no obvious reduction after forming gas annealing, and the values of D_it decreased significantly after combined NO and forming gas annealing treatment. The F-N barrier height, electric field to breakdown (E_bd) and charge to breakdown (Q_bd) of the MOS structure increased from 2.42 eV, 10 MV/cm, 1mC/cm² to 2.62 eV, 10.7 MV/cm, 78mC/cm² after forming gas annealing. The values of F-N barrier height, E_bd and Q_bd for MOS capacitors with combined NO and forming gas annealing treatment are 2.69 eV, 10.2 MV/cm, and 24mC/cm². These results suggest that forming gas annealing is more effective in reliability improvement. While when considering the interface trap density, it seems that combined NO and forming gas annealing treatment is a better choice.

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Materials Science Forum (Volume 858)

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647-650

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.647

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May 2016

Authors:

Zhao Yang Peng, Yi Yu Wang, Hua Jun Shen*, Yun Bai, Yi Dan Tang, Jia Wu, Chengzhan Li, Kean Liu, Xin Yu Liu

Keywords:

4H-SiC MOS, Forming Gas Annealing , Interface Quality, NO, Reliability

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