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Paper Titles
X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
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Alkali Metal Re-Distribution after Oxidation of 4H-SiC
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Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
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Alkali Metal Re-Distribution after Oxidation of 4H-SiC

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Abstract:

Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

677-680

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.677

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Online since:

May 2016

Authors:

Margareta K. Linnarsson*, Sethu Saveda Suvanam, Lasse Vines, Anders Hallén

Keywords:

Cesium, Diffusion, Oxidation, Potassium, SIMS, Sodium

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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