Investigation of Interface State Density with Varied SiO2 Thickness in La2O3/SiO2/4H-SiC MOS Capacitors

Yu Cheng Wang; Yu Ming Zhang; Ren Xu Jia

doi:10.4028/www.scientific.net/MSF.858.689

Paper Titles

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation
p.671

Alkali Metal Re-Distribution after Oxidation of 4H-SiC
p.677

Flatband Voltage Shift Depending on SiO₂/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics
p.681

Atomic Layer Deposition of Al₂O₃ Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
p.685

Investigation of Interface State Density with Varied SiO₂ Thickness in La₂O₃/SiO₂/4H-SiC MOS Capacitors
p.689

Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS
p.693

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO₂ Interfaces
p.697

Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O
p.701

Conduction Mechanisms at SiO₂/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N₂O
p.705

HomeMaterials Science ForumMaterials Science Forum Vol. 858Investigation of Interface State Density with...

Investigation of Interface State Density with Varied SiO₂ Thickness in La₂O₃/SiO₂/4H-SiC MOS Capacitors

Abstract:

SiO₂ with varying thickness (0, 4.45, and 8.05 nm) were grown on n type 4H-SiC epilayer by thermal oxidation and La₂O₃ were stacked on them using atomic layer deposition (ALD). The La₂O₃/SiO₂/4H-SiC metal-oxide-semiconductor (MOS) capacitors were analyzed by X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. C-V curves show that introducing an ultrathin SiO₂ can reduce the effect of lattice mismatch of La₂O₃/4H-SiC structure and then improve interface property. However, the interface quality is reduced as SiO₂ was grown thicker. XPS data show that more carbon cluster remains at the interfacial between SiO₂ and 4H-SiC as the oxidation time increases.

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Materials Science Forum (Volume 858)

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689-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.689

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Online since:

May 2016

Authors:

Yu Cheng Wang, Yu Ming Zhang, Ren Xu Jia*

Keywords:

4H-SiC, Interface States, La₂O₃

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