Flatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO2 Stacked Gate Dielectrics

Takuji Hosoi; Shuji Azumo; Kenji Yamamoto; Masatoshi Aketa; Yusaku Kashiwagi; Shigetoshi Hosaka; Hirokazu Asahara; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.858.681

Paper Titles

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
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Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si
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High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation
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Alkali Metal Re-Distribution after Oxidation of 4H-SiC
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Flatband Voltage Shift Depending on SiO₂/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics
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Atomic Layer Deposition of Al₂O₃ Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
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Investigation of Interface State Density with Varied SiO₂ Thickness in La₂O₃/SiO₂/4H-SiC MOS Capacitors
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Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS
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Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO₂ Interfaces
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Flatband Voltage Shift Depending on SiO2/SiC...

Flatband Voltage Shift Depending on SiO₂/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics

Abstract:

The mechanism of flatband voltage shift in SiC metal-oxide-semiconductor (MOS) capacitors with stacked gate dielectrics consisting of aluminum oxynitride (AlON) layers and SiO₂ underlayers was investigated by varying the AlON and SiO₂ thicknesses. The flatband voltages of the fabricated capacitors with fixed SiO₂ underlayer thicknesses were almost independent of the AlON thickness, indicating the negligible charges in AlON layer. On the other hand, when varying SiO₂ underlayer thickness, the flatband voltage decreased with an increase in capacitance equivalent thickness (CET), and the slope of their linear fit was comparable to that for SiC MOS capacitors without AlON layer. These observations can be well explained by assuming interface charges at AlON/SiO₂ interface with an amount comparable, but a polarity opposite to, those at SiO₂/SiC interface.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

681-684

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.681

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Online since:

May 2016

Authors:

Takuji Hosoi*, Shuji Azumo, Kenji Yamamoto, Masatoshi Aketa, Yusaku Kashiwagi, Shigetoshi Hosaka, Hirokazu Asahara, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Keywords:

Aluminum Oxynitride (AlON), Flatband Voltage, Interface Fixed Charge, MOS Device

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References

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