Interface Analysis of P-Type 4H-SiC/Al2O3 Using Synchrotron-Based XPS

Sethu Saveda Suvanam; Milad Ghadami Yazdi; Muhammad Usman; Mats Götelid; Anders Hallén

doi:10.4028/www.scientific.net/MSF.858.693

Paper Titles

Alkali Metal Re-Distribution after Oxidation of 4H-SiC
p.677

Flatband Voltage Shift Depending on SiO₂/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics
p.681

Atomic Layer Deposition of Al₂O₃ Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
p.685

Investigation of Interface State Density with Varied SiO₂ Thickness in La₂O₃/SiO₂/4H-SiC MOS Capacitors
p.689

Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS
p.693

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO₂ Interfaces
p.697

Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O
p.701

Conduction Mechanisms at SiO₂/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N₂O
p.705

3C-SiC Microdisks for Visible Photonics
p.711

HomeMaterials Science ForumMaterials Science Forum Vol. 858Interface Analysis of P-Type 4H-SiC/Al2O3 Using...

Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS

Abstract:

In this paper, the interface between Al₂O₃ and p-type 4H-SiC is evaluated using x-ray photoelectron spectroscopy (XPS) measurements. These studies are made on dielectric-semiconductor test structures with Al₂O₃ as dielectric with different pre-and post-deposition treatments. XPS measurements on the as-deposited samples with two different pre-surface cleaning have shown no formation of a SiO₂ interlayer. However, after the post deposition rapid thermal annealing (RTA) at 1100 °C in N₂O for 60s, a SiO₂ interlayer is formed. The surface band bending was determined from Si 2p core level peak shifts measured using XPS. These results suggest that Al₂O₃ deposited on the p-type 4H-SiC have a net positive oxide charge which is complementary to that of n-type 4H-SiC. From these shifts it was found that the as-deposited RCA cleaned sample had an oxide charge of 5.6×10¹³q/cm^-2, as compared to standard cleaned samples, having 4.6×10¹³ q/cm^-2. A further reduction in oxide charge was observed after annealing at 1100 °C in N₂O, down to a value of 4×10¹³ q/cm^-2.