Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

Patrick Fiorenza; Salvatore Di Franco; Filippo Giannazzo; Simone Rascunà; Mario Saggio; Fabrizio Roccaforte

doi:10.4028/www.scientific.net/MSF.858.701

Paper Titles

Atomic Layer Deposition of Al₂O₃ Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
p.685

Investigation of Interface State Density with Varied SiO₂ Thickness in La₂O₃/SiO₂/4H-SiC MOS Capacitors
p.689

Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS
p.693

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO₂ Interfaces
p.697

Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O
p.701

Conduction Mechanisms at SiO₂/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N₂O
p.705

3C-SiC Microdisks for Visible Photonics
p.711

Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
p.715

Development of “Si-Vapor Etching” and “Si Vapor Ambient Anneal” in TaC/Ta Composite Materials
p.719

HomeMaterials Science ForumMaterials Science Forum Vol. 858Impact of Phosphorus Implantation on the...

Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O

Abstract:

In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N₂O on the properties of the SiO₂/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the electrically active dopants introduced by the nitridation and by the combination of P pre-implantation and nitridation were determined by high resolution scanning capacitance microscopy (SCM). Macroscopic capacitance-voltage (C-V) measurements on metal oxide semiconductor (MOS) capacitors and nanoscale C-V analyses by SCM allowed to quantify the electrical effect of the donors introduced underneath the SiO₂/4H-SiC interface. Phosphorous pre-implantation and subsequent high temperature electrical activation has been shown not only to produce an increased doping in the 4H-SiC surface region but also a better homogeneity of surface potential with respect to the use of N₂O annealing only.

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Materials Science Forum (Volume 858)

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701-704

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.701

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Online since:

May 2016

Authors:

Patrick Fiorenza*, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Keywords:

Ion Implantation, MOS, Scanning Capacitance Microscopy, Surface Potential

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