Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas

Asumi Hirooka; Hitoshi Habuka; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.858.715

Paper Titles

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO₂ Interfaces
p.697

Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O
p.701

Conduction Mechanisms at SiO₂/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N₂O
p.705

3C-SiC Microdisks for Visible Photonics
p.711

Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
p.715

Development of “Si-Vapor Etching” and “Si Vapor Ambient Anneal” in TaC/Ta Composite Materials
p.719

Novel 3C-SiC Microstructure for MEMS Applications
p.723

Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
p.733

Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
p.737

HomeMaterials Science ForumMaterials Science Forum Vol. 858Etching Rate Behavior of 4H-Silicon Carbide...

Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas

Abstract:

4H-silicon carbide epitaxial film was etched using chlorine trifluoride gas. The etch rate of C-face at 2-100 % and at various temperatures was 0.8 – 10 μm min^-1, which was comparable to those of the silicon carbide substrates. The surface morphology observed after the etching was very smooth, in contrast to that of the substrate showing many pits.