Novel 3C-SiC Microstructure for MEMS Applications

Abstract:

The aim of this paper is to review the recent developments conducted for the achievement of 3C-SiC‑based heterostructures compatible with MEMS applications. Indeed, the research activities engaged since years permitted to demonstrate that the defect density has an impact towards the Young’s modulus of sub-micron 3C‑SiC epilayers. We also gained knowledge about the stress relaxation mechanisms, targeting to master the stress gradient, as stress is a key parameter to consider MEMS applications.Based on these results, we investigated the elaboration of microstructures using 3C‑SiC/Si/3C‑SiC stacks on silicon substrates. Our first noticeable result was the elaboration of a (110)-oriented 3C‑SiC membrane on a 3C‑SiC pseudo-substrate, using the silicon epilayer as a sacrificial one. But the surface of the 3C‑SiC membrane was facetted and rough, which could hamper its use for the development of new MEMS devices. Then, with further improvements, we succeeded to master the growth of a (111)‑oriented 3C‑SiC epilayer. This feature led to a drastic reduction of the roughness in comparison with the (110) orientation. Actually, using the same experimental protocol than previously, we succeeded to complete a (111)‑oriented 3C‑SiC membrane with a RMS roughness limited to 9nm. Such an optimized structure could be the starting point for the achievement of new MEMS devices operating in harsh environment or for medical applications benefiting of the 3C‑SiC biocompatibility

• Periodical: Materials Science Forum (Volume 858)
• Pages: 723-728
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.723
• Online since: May 2016
• Authors: Jean François Michaud, Marc Portail, Rami Khazaka, Marcin Zielinski, Thierry Chassagne, Daniel Alquier*
• Keywords: 3C-SiC, Membrane, MEMS, Micromachining, Stack

References

[1] Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) for Harsh Environments, edited by R. Cheung, Imperial College Press, (2006).

DOI: 10.1142/9781860949098_0001

[2] M. Mehregany and C.A. Zorman, Thin Solid Films 355-356 (1999) 518.

[3] P.M. Sarro, Sensors and Actuators 82 (2000) 210.

[4] S. Nishino, J.A. Powell, H.A. Will, Applied Physics Letters 42 (1983) 460.

[5] J. Eriksson, M.H. Weng, F. Roccaforte, F. Giannazzo, S. Leone, V. Raineri. Applied Physics Letters 95 (2009) 081907.

DOI: 10.1063/1.3211965

[6] X. Song, J. F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard and D. Alquier, Applied Physics Letters 96 (2010) 142104.

DOI: 10.1063/1.3383233

[7] Stephen E. Saddow, Silicon Carbide Biotechnology - A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Elsevier, (2011).

[8] W. Chang and C. Zorman. Journal of Materials Science 43 (2008) 4512.

[9] M. Placidi, P. Godignon, N. Mestres, G. Abadal, G. Ferro, A. Leycuras and T. Chassagne. Sensors and Actuators B 133 (2008) 276.

DOI: 10.1016/j.snb.2007.07.148

[10] R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J. -F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier. Journal of Applied Physics 116 (2014).

DOI: 10.1063/1.4891833

[11] M.B.J. Wijesundara and R. Azevedo. Silicon carbide microsystems for harsh environments. MEMS Reference Shelf 22. Springer (2011).

DOI: 10.1007/978-1-4419-7121-0

[12] S. Sundararajan and B. Bhushan. Wear 217 (1998) 251.

[13] B. Pecholt and P. Molian. Materials and Design 32 (2011) 3414.

[14] C. Locke, G. Kravchenko, P. Waters, J.D. Reddy, K. Du, A.A. Volinsky, C.L. Frewin and S.E. Saddow, Materials Science Forum 615–617 (2009) 633.

DOI: 10.4028/www.scientific.net/msf.615-617.633

[15] S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski and D. Alquier, Materials Letters 77 (2012) 54.

DOI: 10.1016/j.matlet.2012.02.128

[16] C. Cardinaud, M.C. Peignon, P.Y. Tessier. Applied Surface Science 164 (2000) 72.

[17] P.H. Yih, V. Saxena and A.J. Steckl. Physica Status Solidi (b) 202 (1997) 605.

[18] 3C-SiC: from electronic to MEMS devices, in Advanced Silicon Carbide Devices and Processing, edited by S.E. Saddow and F. La Via, Intech, 2015 ISBN 978-953-51-2168-8.

DOI: 10.5772/61020

[19] J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski and D. Alquier, Materials Research Society Symposium Proceedings 1246 (2010) B09-04.

DOI: 10.1557/proc-1246-b09-04

[20] R. Anzalone, M. Camarda, A. Canino, N. Piluso, F. La Via, and G. D'Arrigo, Electrochem. Solid-State Lett. 2011 14(4): H161-H162.

DOI: 10.1149/1.3544492

[21] K. Yagi and H. Nagasawa, Materials Science Forum 264-268 (1998) 191.

[22] T. Tong, M. Mehregany and L.G. Matus, Applied Physics Letters 60, 2992 (1992).

[23] W. Fang and J. A. Wickert, Journal of Micromechanics and Microengineering 6 (1996) 301.

[24] M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier, Journal of Applied Physics 111 (2012) 53507.

DOI: 10.1063/1.3687370

[25] J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski and D. Alquier, Microelectronic Engineering 105 (2013) 65.

DOI: 10.1016/j.mee.2013.01.010

[26] R. Khazaka, M. Portail, P. Vennéguès, D. Alquier and J.F. Michaud, Acta Materialia 98 (2015) 336.

DOI: 10.1016/j.actamat.2015.07.052

[27] R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud, Materials Science Forum 821 (2015) 978-981.

DOI: 10.4028/www.scientific.net/msf.821-823.978

[28] R. Khazaka, E. Bahette, M. Portail, D. Alquier and J.F. Michaud, Materials Letters 160 (2015) 28.

DOI: 10.1016/j.matlet.2015.07.071