Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization

Hua Ping Jiang; Mao Long Ke; Yogesh K. Sharma; Xiao Ping Dai; Ian Deviny; Chang Wei Zheng

doi:10.4028/www.scientific.net/MSF.858.745

Paper Titles

Novel 3C-SiC Microstructure for MEMS Applications
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Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
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Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
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Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
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Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization
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Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes
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Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
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Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices
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Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Optimum Design of 4H-SiC Junction Barrier Schottky...

Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization

Abstract:

Optimum n-drift region of a 4H-SiC Junction Barrier Schottky Diode (JBS) was analyzed by simulation with consideration of the anisotropic impact ionization. According to the detailed simulations using SRIM and Sentaurus, model parameters of empirical equations were obtained through fitting, which showed that the anisotropic avalanche model (2D-ANISO) differs significantly from the 1-dimensional empirical model (1D-Cooper) and the old isotropic avalanche model (2D-ISO). These initial results suggested that the JFET resistance and anisotropic impact ionization should be taken into account during the optimization of a 4H-SiC JBS in which field crowding at the corner of p-grid causes higher reverse leakage current.

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Materials Science Forum (Volume 858)

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745-748

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.745

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Online since:

May 2016

Authors:

Hua Ping Jiang*, Mao Long Ke, Yogesh K. Sharma, Xiao Ping Dai, Ian Deviny, Chang Wei Zheng

Keywords:

Anisotropic, Impact Ionization, Junction Barrier Schottky (JBS) Diode, Simulation

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