Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

Anatoly M. Strel'chuk; Viktor V. Zelenin; Alexei N. Kuznetsov; Joseph Tringe; Albert V. Davydov; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.858.749

Paper Titles

Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
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Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
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Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
p.741

Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization
p.745

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes
p.749

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
p.753

Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices
p.757

Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes
p.761

Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach
p.765

HomeMaterials Science ForumMaterials Science Forum Vol. 858Anomalous Scatter of Forward Current-Voltage...

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes

Abstract:

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He⁺ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He⁺ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

749-752

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.749

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Online since:

May 2016

Authors:

Anatoly M. Strel'chuk*, Viktor V. Zelenin, Alexei N. Kuznetsov, Joseph Tringe, Albert V. Davydov, Alexander A. Lebedev

Keywords:

Excess Current, He⁺-Irradiation, Schottky Barrier Diode (SBD), Series Resistance, Shunt Current, Unintentional Dual Barrier Schottky (DBS) Structure

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