Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
T. Makino et al., "Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vol. 858, pp. 753-756, 2016