Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

Takahiro Makino; Shinobu Onoda; Norihiro Hoshino; Hidekazu Tsuchida; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.858.753

Paper Titles

Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
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Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
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Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization
p.745

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes
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Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
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Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices
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Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes
p.761

Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach
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A New Type of Single Carrier Conduction Rectifier on SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Epitaxial Layer Thickness Dependence on Heavy Ion...

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

Abstract:

The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.

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Periodical:

Materials Science Forum (Volume 858)

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753-756

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.753

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Online since:

May 2016

Authors:

Takahiro Makino*, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Takeshi Ohshima

Keywords:

Heavy-Ion Irradiation, Impact Ionization, Radiation Tolerance, Schottky Barrier Diode (SBD), Silicon Carbide (SiC), Single Event Effect

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