Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach

Takaaki Tominaga; Naoyuki Kawabata; Akihiro Koyama; Takanori Tanaka; Hiroshi Watanabe; Nobuyuki Tomita; Naruhisa Miura; Takeharu Kuroiwa; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.858.765

Paper Titles

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes
p.749

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
p.753

Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices
p.757

Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes
p.761

Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach
p.765

A New Type of Single Carrier Conduction Rectifier on SiC
p.769

Forward Current of Al⁺ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components
p.773

Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness
p.777

Optimization of 1700V 4H-SiC JBS Diode Parameters
p.782

HomeMaterials Science ForumMaterials Science Forum Vol. 858Low Resistivity SiC Devices with a Drift Layer...

Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach

Abstract:

A reduction of drift resistivity by an optimized epitaxial layer has been theoretically calculated using variational approach. An epitaxial growth was carried out based on the calculated design of the drift layer for a 1.7 kV SBD, with a conventional epitaxial growth for comparison, to experimentally prove a reduction of drift resistivity. An improvement of trade-off relationships for the SBD with an optimized epitaxial layer has been revealed through the investigation of their electrical characteristics.