Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices

Nicolas Thierry-Jebali; Thibault Kempf; Fabien Mandorlo

doi:10.4028/www.scientific.net/MSF.858.757

Paper Titles

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
p.741

Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization
p.745

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes
p.749

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
p.753

Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices
p.757

Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes
p.761

Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach
p.765

A New Type of Single Carrier Conduction Rectifier on SiC
p.769

Forward Current of Al⁺ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components
p.773

HomeMaterials Science ForumMaterials Science Forum Vol. 858Comparison of 2.5D and 3D Simulation Methods for...

Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices

Abstract:

This paper assesses the 2.5D simulation method for limiting the electrodes debiasing of interdigitated devices. This method uses both spice and finite element method simulations where a resistance grid models the electrodes and a 2D finite elements structure models the device. A lateral 4H-SiC PiN diode has been selected for this study. In order to assess this method, 2.5D simulation method has been compared to 3D simulations.