Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

Besar Asllani; Maxime Berthou; Dominique Tournier; Pierre Brosselard; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.858.741

Paper Titles

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Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
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Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
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Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
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Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization
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Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes
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Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
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Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Modeling of Inhomogeneous 4H-SiC Schottky and JBS...

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

Abstract:

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

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Materials Science Forum (Volume 858)

Pages:

741-744

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.741

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Online since:

May 2016

Authors:

Besar Asllani*, Maxime Berthou, Dominique Tournier, Pierre Brosselard, Philippe Godignon

Keywords:

4H-SiC, Barrier Height Temperature Dependance, JBS, Partial Ionisation, Richardson Constant, Schottky Diode

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