Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

Ki Hyun Kim; Ye Hwan Kang; Jung Hun Lee; Eun Sik Jung; In Ho Kang; Chang Heon Yang

doi:10.4028/www.scientific.net/MSF.858.733

Paper Titles

3C-SiC Microdisks for Visible Photonics
p.711

Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
p.715

Development of “Si-Vapor Etching” and “Si Vapor Ambient Anneal” in TaC/Ta Composite Materials
p.719

Novel 3C-SiC Microstructure for MEMS Applications
p.723

Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
p.733

Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
p.737

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
p.741

Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization
p.745

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes
p.749

HomeMaterials Science ForumMaterials Science Forum Vol. 858Study of 4H-SiC Junction Barrier Schottky(JBS)...

Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

Abstract:

In this paper, to verify implant effect characteristics variation by stripe type, grid type and circle type, the P+ implant patterning was studied. The result of two-dimensional simulation was controlled by adjusting the relative area of Schottky and p–n junction dimensions of the device, which is easily implemented during the device layout design. 4H-SiC JBSs with three types have been successfully fabricated and breakdown voltage in the range of 1694–2051 V has been achieved. The results of fabricated JBSs, show that the stripe type JBSs combine the best features of the P+ implant patterns.