Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction

Masahiro Yoshida; Yasunori Kutsuma; Daichi Dohjima; Kenji Ohwada; Toshiya Inami; Noboru Ohtani; Tadaaki Kaneko; Jun'ichiro Mizuki

doi:10.4028/www.scientific.net/MSF.858.505

Paper Titles

Ultra-Fast SiC Wafer Surface Roughness Mapping
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Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
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Concentration Profile Simulation of SiC/Si Heterostructures
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Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction
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Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV
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A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs
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1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
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Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Development of the Compact Furnace for the In Situ...

Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction

Abstract:

We have established the grazing-incidence x-ray diffraction (GIXD) method under ultra- high temperature for in-situ crystal growth observation. For this purpose, we have developed the compact furnace which can be mounted on a goniometer used for the GIXD experiment. Using the custom-designed furnace, we have succeeded in controlling very high temperature around 1800°C. Subsequently, we have proved the performance of the furnace through the measurement of the tem- perature dependence of a-lattice constant of 4H-SiC in the range from room temperature to 1500 °C.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

505-508

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.505

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Online since:

May 2016

Authors:

Masahiro Yoshida*, Yasunori Kutsuma, Daichi Dohjima, Kenji Ohwada, Toshiya Inami, Noboru Ohtani, Tadaaki Kaneko, Jun'ichiro Mizuki

Keywords:

Graphene, In Situ Observation, SiC Thermal Decomposition

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