Ultra-Fast SiC Wafer Surface Roughness Mapping

Yoshihiro Nakano; Yuji Asakawa; Hirokazu Seki; Jeff Seaman; Albert A. Burk

doi:10.4028/www.scientific.net/MSF.858.489

Paper Titles

On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs
p.473

Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements
p.477

Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress
p.481

Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode
p.485

Ultra-Fast SiC Wafer Surface Roughness Mapping
p.489

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al₂O₃ Films
p.493

Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
p.497

Concentration Profile Simulation of SiC/Si Heterostructures
p.501

Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction
p.505

HomeMaterials Science ForumMaterials Science Forum Vol. 858Ultra-Fast SiC Wafer Surface Roughness Mapping

Ultra-Fast SiC Wafer Surface Roughness Mapping

Abstract:

SiC wafer surface roughness is known to affect the electrical properties of certain power devices. As a result, inspection of the surface roughness can be a very important step for SiC device manufacturing processes. In this paper, we propose a newly fast surface roughness measurement method using Differential Interference Contrast (DIC) microscopy image. Results from this method were compared against white-light interference measurement system and a good correlation was confirmed. The comparison result confirmed that this method was a valid method to measure the surface roughness. This method enables users to inspect the surface roughness in 5 minutes (100mm wafer) and 10 minutes (150mm wafers), respectively.