Dipole Type Behavior of NO Grown Oxides on 4H–SiC

Daniel Haasmann; Hamid Amini Moghadam; Ji Sheng Han; Amirhossein Aminbeidokhti; Alan Iacopi; Sima Dimitrijev

doi:10.4028/www.scientific.net/MSF.858.453

Paper Titles

Accuracy of the Energy Distribution of the Interface States at the SiO₂/SiC Interface by Conductance Method
p.437

Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
p.441

Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
p.445

Characterization of Thermally Oxidized SiO₂/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
p.449

Dipole Type Behavior of NO Grown Oxides on 4H–SiC
p.453

Importance of SiC Stacking to Interlayer States at the SiC/SiO₂ Interface
p.457

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
p.461

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation – A First Principles Study
p.465

Nondestructive and Local Evaluation of SiO₂/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
p.469

HomeMaterials Science ForumMaterials Science Forum Vol. 858Dipole Type Behavior of NO Grown Oxides on 4H–SiC

Dipole Type Behavior of NO Grown Oxides on 4H–SiC

Abstract:

In this paper, we present surprising MOS capacitor C–V bias instability observed in NO-grown oxides, with distinctly different behavior compared to that of conventional NO-annealed oxides on 4H-SiC. Using sequential back-and-forth and bias-temperature stress C–V measurements, it was demonstrated that the C–V shift direction of NO-grown oxides was opposite to that of NO-annealed oxides. A model based on bias-temperature stress orientated near-interfacial dipoles is proposed to explain this unique behavior of NO-grown oxides.

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Materials Science Forum (Volume 858)

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453-456

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.453

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Online since:

May 2016

Authors:

Daniel Haasmann*, Hamid Amini Moghadam, Ji Sheng Han, Amirhossein Aminbeidokhti, Alan Iacopi, Sima Dimitrijev

Keywords:

4H-SiC, Dipole, MOS Capacitor, Oxide, Reliability, Threshold Voltage Instability

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