Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing

Atthawut Chanthaphan; Yuta Fukushima; Kenji Yamamoto; Masatoshi Aketa; Hirokazu Asahara; Takashi Nakamura; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.858.445

Paper Titles

4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations
p.429

A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
p.433

Accuracy of the Energy Distribution of the Interface States at the SiO₂/SiC Interface by Conductance Method
p.437

Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
p.441

Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
p.445

Characterization of Thermally Oxidized SiO₂/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
p.449

Dipole Type Behavior of NO Grown Oxides on 4H–SiC
p.453

Importance of SiC Stacking to Interlayer States at the SiC/SiO₂ Interface
p.457

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
p.461

HomeMaterials Science ForumMaterials Science Forum Vol. 858Cathodoluminescence Study of SiO2/4H-SiC...

Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing

Abstract:

The radiative defect centers in thermally-grown SiO₂/4H-SiC structures with high-temperature post-oxidation annealing (POA) in various ambient gas, i.e. Ar, H₂, and NO_x, were examined using cathodoluminescence (CL) measurement. It was found that radiative centers with an extremely high luminescent efficiency were remained at the SiO₂/SiC interfaces after Ar-POA and FGA. Thus, these defect centers are very stable against high-temperature annealing and reducing ambient. In contrast, NO_x-POA significantly reduced amounts of the radiative defects that might be related to channel mobility improvement in SiC-MOSFETs.