A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation

Keiichi Yamada; Junji Senzaki; Kazutoshi Kojima; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.858.433

Paper Titles

Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
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Ion Implantation Defects in 4H-SiC DIMOSFET
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An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
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4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations
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A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
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Accuracy of the Energy Distribution of the Interface States at the SiO₂/SiC Interface by Conductance Method
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Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
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Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
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Characterization of Thermally Oxidized SiO₂/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
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HomeMaterials Science ForumMaterials Science Forum Vol. 858A Novel Approach to Analysis of F-N Tunneling...

A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation

Abstract:

The new indicators, effective gate oxide thickness t_c and effective gate electrode area D, and their combination are applied for a new analysis method of Fowler-Nordheim (F-N) tunneling characteristics in MOS capacitor having oxide thickness fluctuation. This method considering the conduction properties of F-N tunneling characteristics correlates its characteristics to the oxide reliability. These indicators quantified with the influence of the oxide thickness fluctuation can provide the net values of the electric field and the current density on the gate oxide. This new analysis method will lead to reducing the evaluation time for the reliability assessment.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.433

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Online since:

May 2016

Authors:

Keiichi Yamada*, Junji Senzaki, Kazutoshi Kojima, Hajime Okumura

Keywords:

Effective Gate Electrode Area, Effective Oxide Thickness, F-N Tunneling, Oxide Thickness Fluctuation

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References

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DOI: 10.4028/www.scientific.net/msf.821-823.472

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