Effect of Nitrogen Flux on the Properties of N-Doped Zn_1-xMg_xO Thin Films

Abstract:

Different Mg content in Zn_1-xMg_xO was also obtained by varying N₂ flux. UV emission peak in photoluminescence (PL) spectra shift from 350 nm to 360 nm, and then to 352 nm, which is consistent with the result of absorption spectra of the Zn_1-xMg_xO:N films grown at different N₂ flux. The emission intensity of the Zn_1-xMg_xO:N band edge peak was drastically reduced with increasing N₂ flux, which was attributed to the concentration of nonradiative recombination centers increased with increasing N₂ flux. The carrier concentration of N-doped Zn_1-xMg_xO increased with increasing N₂ flux below 0.8 sccm, while those above 0.8 sccm decreased. The p-type Zn_1-xMg_xO:N with the maximum hole concentration 3.97×10¹⁷ cm^-3 was obtained by optimizing growth conditions.

• Periodical: Materials Science Forum (Volume 900)
• Pages: 83-88
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.900.83
• Online since: July 2017
• Authors: Weiwei Liu*, Cheng Lin Liu, Hong Xia Chen, Rong Wang
• Keywords: Electrical Properties, N-Doped Zn_1-xMg_xO, Nitrogen Flux, Optical Properties

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