Measuring the Absorption Coefficients of TiN Thin Films with Different Thickness

Abstract:

In this work, different thick TiN thin films were prepared by pulsed laser deposition on GaN substrates at 650°C. The crystal structure and morphology are characterized by X-ray Diffraction and Atomic Force Microscopy. We characterized the sample by cathodoluminescence spectroscopy at room temperature and measured the thickness of the film by a cross-sectional scanning electron microscopy. Combining the attenuation of light intensity and the thickness, the absorption coefficient of the samples can be estimated by the Beer-Lambert law. The absorption coefficients of TiN metal thin film obtained here are closed with each other. The optical properties may not change with increasing thickness.

• Periodical: Materials Science Forum (Volume 904)
• Pages: 120-124
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.904.120
• Online since: August 2017
• Authors: Hao Yu Chu, Yu Xiong Li, Cheng Yan Gu, Chun Ping Jiang*
• Keywords: Absorption Coefficients, Cathodoluminescence Spectroscopy, TiN Thin Films, Transition Metal Nitrides Meaterial

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