Epitaxial Growth and Characterization of Nonpolar A-Plane AlGaN-Based Multiple Quantum Wells

Jian Guo Zhao; Xiong Zhang; Jia Qi He; Shuai Chen; Zi Li Wu; Yi Ping Cui

doi:10.4028/www.scientific.net/MSF.934.8

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HomeMaterials Science ForumMaterials Science Forum Vol. 934Epitaxial Growth and Characterization of Nonpolar...

Epitaxial Growth and Characterization of Nonpolar A-Plane AlGaN-Based Multiple Quantum Wells

Abstract:

A serious of non-polar a-plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on the semi-polar r-plane sapphire substrate with metal organic chemical vapor deposition technology. Intense MQWs-related emission peaks at an emission wavelength covered from 277-294 nm were observed based on the photoluminescence measurement. It was found that the employment of the trimethyl-aluminum (TMAl) flow duty-ratio modulation method which was developed based on the two-way pulsed-flows growth technique played a crucial role to control the Al composition of the non-polar a-plane AlGaN epi-layers. The non-polar a-plane AlGaN-based MQWs were deposited with the new developed TMAl flow duty-ratio modulation technique. Evident-3th order X-ray diffraction (XRD) satellite peak was observed from the high resolution-XRD measurement, proving the successful growth of non-polar a-plane AlGaN-based MQWs with abrupt hetero-interfaces.

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Materials Science Forum (Volume 934)

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8-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.934.8

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Online since:

October 2018

Authors:

Jian Guo Zhao*, Xiong Zhang, Jia Qi He, Shuai Chen, Zi Li Wu, Yi Ping Cui

Keywords:

Multiple Quantum Wells, Non-Polar A-Plane AlGaN, Photoluminescence, X-Ray Diffraction

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