On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

Julietta Weisse; Martin Hauck; Tomasz Sledziewski; Michael Krieger; Anton J. Bauer; Heinz Mitlehner; Lothar Frey; Tobias Erlbacher

doi:10.4028/www.scientific.net/MSF.963.433

Paper Titles

Activation Energy for the Post Implantation Annealing of 10¹⁹ cm^-3 and 10²⁰cm^-3 Ion Implanted Al in 4H SiC
p.416

1300°C Annealing of 1×10²⁰ Al⁺ Ion Implanted 3C-SiC
p.420

Raman Spectroscopy Characterization of Ion Implanted 4H-SiC
p.424

Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations
p.429

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
p.433

Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS
p.437

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
p.441

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
p.445

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
p.451

HomeMaterials Science ForumMaterials Science Forum Vol. 963On the Origin of Charge Compensation in...

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

Abstract:

Aluminum implanted 4H-SiC often shows an unexpected increase of the free hole density at elevated temperatures in Hall Effect measurements. Here we show that this phenomenon cannot solely be traced down to the Hall scattering factor and the presence of excited acceptor states. It is necessary to assume an additional defect center in the lower half of the band gap with ionization energies higher than that of aluminum to explain this behavior. Therefore, we investigated ion-implanted square van-der-Pauw samples with Hall Effect and complementary SIMS measurements. An analysis of the data using the neutrality equation reveals compensation ratios of 20 % to 90 %, depending on the aluminum concentration and the concentration of the deep defect center of up to 50 % of the doping.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2018

View Preview

Info:

Periodical:

Materials Science Forum (Volume 963)

Pages:

433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.433

Citation:

Cite this paper

Online since:

July 2019

Authors:

Julietta Weisse*, Martin Hauck, Tomasz Sledziewski, Michael Krieger, Anton J. Bauer, Heinz Mitlehner, Lothar Frey, Tobias Erlbacher

Keywords:

Activation, Aluminum Implantation, Compensation, Hall Effect, High Temperature Implantation, Ionization Energy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] N. S. Saks, S.-H. Ryu and A. V. Suvorov, Appl. Phys. Lett., Vol. 81, 2002, p.4958.

Google Scholar

[2] J. Pernot, W. Zawadzki, S. Contreras, J. L. Robert, E. Neyret and L. D. Cioccio, J. Appl. Phys., Vol. 90, 2001, p.1868.

Google Scholar

[3] H. Fujihara, J. Suda and T. Kimoto, Jap. J. Appl. Phys., Vol. 56, 2017, p.070306.

Google Scholar

[4] J. Weisse, M. Hauck, T. Sledziewski, M. Tschiesche, M. Krieger, A. Bauer, H. Mitlehner, L. Frey and T. Erlbacher, Mat. Sci. Forum, Vol. 924, 2017, pp.184-187.

DOI: 10.4028/www.scientific.net/msf.924.184

Google Scholar

[5] H. Matsuura, Phys. Rev. B, Vol. 74, Issue 24, 2006, p.245216.

Google Scholar

[6] G. Pensl, F. Schmid, F. Ciobanu, M. Laube, S. A. Reshanov, N. Schulze, K. Semmelroth, H. Nagasawa, A. Schöner and G. Wagner, Mat. Sci. Forum, Vol. 433-436, 2003, pp.365-370.

DOI: 10.4028/www.scientific.net/msf.433-436.365

Google Scholar

[7] S. Asada, T. Okuda, T. Kimoto and J. Suda, Appl. Phys. Exp., Vol. 9, No. 4, 2016, p.041301.

Google Scholar

[8] T. Kimoto and J.A. Cooper, Fundamentals of Silicon Carbide Technology, 1st ed. (Wiley, Singapore, 2014).

Google Scholar