Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

Matthias Kocher; Tobias Erlbacher; Mathias Rommel; Anton J. Bauer

doi:10.4028/www.scientific.net/MSF.963.441

Paper Titles

Raman Spectroscopy Characterization of Ion Implanted 4H-SiC
p.424

Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations
p.429

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
p.433

Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS
p.437

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
p.441

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
p.445

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
p.451

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET
p.456

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
p.460

HomeMaterials Science ForumMaterials Science Forum Vol. 963Decoration of Al Implantation Profiles in 4H-SiC...

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

Abstract:

The possibility to analyze micrometer scaled 2D implantation profiles is essential for improving SiC power devices. Due to the fact that the oxidation rate depends on the doping concentration a rather simple method was developed in order to decorate highly doped (aluminum) implantation profiles. For this purpose, different samples were grinded with a shallow bevel angle and subsequently oxidized. It could be shown that this method allows analyzing the implantation depth of different box-shape implanted samples. Furthermore the ability to distinguish micrometer scaled 2D profiles for a state-of-the-art SiC power device could be shown.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

441-444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.441

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Online since:

July 2019

Authors:

Matthias Kocher*, Tobias Erlbacher, Mathias Rommel, Anton J. Bauer

Keywords:

Decoration, Implantation, Oxidation

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References

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