Improved SiO2/ 4H-SiC Interface Defect Density Using Forming Gas Annealing

Stephan Wirths; Giovanni Alfieri; Alyssa Prasmusinto; Andrei Mihaila; Lukas Kranz; Marco Bellini; Lars Knoll

doi:10.4028/www.scientific.net/MSF.963.465

Paper Titles

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
p.445

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
p.451

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET
p.456

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
p.460

Improved SiO₂/ 4H-SiC Interface Defect Density Using Forming Gas Annealing
p.465

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiN_x Interface Layer
p.469

Evidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap Density
p.473

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
p.479

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
p.485

HomeMaterials Science ForumMaterials Science Forum Vol. 963Improved SiO2/ 4H-SiC Interface Defect Density...

Improved SiO₂/ 4H-SiC Interface Defect Density Using Forming Gas Annealing

Abstract:

We investigated the influence of forming gas annealing (FGA) before and after oxide deposition on the SiO₂/4H-SiC interface defect density (D_it). For MOS capacitors (MOSCAPs) that were processed using FGAs at temperatures above 1050°C, CV characterization revealed decreased flat band voltage shifts and stretch-out for different sweep directions and frequencies. Moreover, constant-capacitance deep level transient spectroscopy (CC-DLTS) was performed and showed D_it levels below 10¹² cm^-2eV^-1 for post deposition FGA at 1200°C. Finally, lateral MOSFETs were fabricated to analyze the temperature-dependent threshold voltage (V_th) shift.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

465-468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.465

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Online since:

July 2019

Authors:

Stephan Wirths*, Giovanni Alfieri, Alyssa Prasmusinto, Andrei Mihaila, Lukas Kranz, Marco Bellini, Lars Knoll

Keywords:

4H-SiC MOSCAPs, Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS), Interface Traps, SiO₂/ SiC Interface

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