Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

Teruaki Kumazawa; Mitsuo Okamoto; Miwako Iijima; Yohei Iwahashi; Shinji Fujikake; Tuyoshi Araoka; Tae Tawara; Hiroshi Kimura; Kimimori Hamada; Shinsuke Harada; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.963.469

Paper Titles

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
p.451

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET
p.456

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
p.460

Improved SiO₂/ 4H-SiC Interface Defect Density Using Forming Gas Annealing
p.465

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiN_x Interface Layer
p.469

Evidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap Density
p.473

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
p.479

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
p.485

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
p.490

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Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiN_x Interface Layer

Abstract:

The SiO₂/SiC interface quality has a significant effect on the performance of 4H-SiC MOS devices. The introduction of nitrogen to the SiO₂/SiC interface is a well-known method for reducing the interface state density (D_it). In this study, we introduced nitrogen to the SiO₂/SiC interface by forming SiN_x films using atomic layer deposition (ALD) and thus improved the interface quality. O₂ annealing with a SiN_x interface layer of optimal thickness enhanced the field effect mobility.