Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET

Tomasz Sledziewski; Tobias Erlbacher; Anton J. Bauer; Lothar Frey; Xi Ming Chen; Yan Li Zhao; Chengzhan Li; Xiao Ping Dai

doi:10.4028/www.scientific.net/MSF.963.490

Paper Titles

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiN_x Interface Layer
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Evidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap Density
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Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
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Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
p.485

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
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Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers
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Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC
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Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
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Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Comparison between Ni-SALICIDE and Self-Aligned...

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET

Abstract:

A comparison between self-aligned process (using lift-off) and Ni-SALICIDE used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is shown that the Ni-SALICIDE process with first silicidation at 500 °C does not degrade the electrical properties of silicon dioxide; particularly, a degradation of the interlayer dielectric between source and gate is not evident. Additionally, this first silicidation is found to have a positive impact on the specific resistance of contacts formed on p-type SiC using NiAl2.6% as an ohmic metal.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

490-493

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.490

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Online since:

July 2019

Authors:

Tomasz Sledziewski*, Tobias Erlbacher, Anton J. Bauer, Lothar Frey, Xi Ming Chen, Yan Li Zhao, Chengzhan Li, Xiao Ping Dai

Keywords:

4H-SiC, MOSFET, Nickel Silicide, Ohmic Contact, Salicide, Self-Alignment

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