Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers

Vinoth Sundaramoorthy; Lukas Kranz; Giovanni Alfieri

doi:10.4028/www.scientific.net/MSF.963.494

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Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Microstructural Analysis of Ti/Ni Bilayer Ohmic...

Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers

Abstract:

The micro-structural analysis of Ti/Ni bilayer as Ohmic contacts to n-type 4H-SiC is reported. There was no carbon segregation at the interface between the NiSi layer and the 4H-SiC layer for Ti/Ni contacts, unlike pure Ni contacts. The diffraction pattern image shows the presence of the cubic NiSi film which grows on the SiC surface. The film interface with the SiC was uniform and more planar. An optimized contact in terms of contact morphology was achieved using a bilayer contact Ti/Ni (20/100nm) annealed at 1100 °C for 5 minutes in vacuum.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

494-497

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.494

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Online since:

July 2019

Authors:

Vinoth Sundaramoorthy*, Lukas Kranz, Giovanni Alfieri

Keywords:

Bilayer Contacts, n-Type 4H-SiC, Ohmic Contact

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