Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

Clément Berger; Jean François Michaud; David Chouteau; Daniel Alquier

doi:10.4028/www.scientific.net/MSF.963.502

Paper Titles

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
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Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
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Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers
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Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC
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Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
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Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights
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Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis
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Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes
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Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Laser Annealing Simulations of Metallisations...

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

Abstract:

Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.

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Periodical:

Materials Science Forum (Volume 963)

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502-505

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.502

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Online since:

July 2019

Authors:

Clément Berger*, Jean François Michaud, David Chouteau, Daniel Alquier

Keywords:

4H-SiC, Laser Annealing, Ohmic Contact, Simulation

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