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Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

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Abstract:

Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

502-505

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.502

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Online since:

July 2019

Authors:

Clément Berger*, Jean François Michaud, David Chouteau, Daniel Alquier

Keywords:

4H-SiC, Laser Annealing, Ohmic Contact, Simulation

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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