Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights

Abstract:

In this paper, the impact of substrate preconditioning by ion bombardment in-situ in a conventional sputter equipment on n-doped 4H-silicon carbide (SiC) Schottky diodes with molybdenum nitride metallization is studied. By variation of the plasma power during argon ion bombardment, the effective barrier height is adjustable in the range from 0.66 to 0.96 eV, as deduced by current / voltage measurements over a wide temperature range. Therefore, this approach offers a straightforward method to tailor the Schottky barrier height over a significant range by introducing an insitu substrate pretreatment step available in most sputter equipment.

• Periodical: Materials Science Forum (Volume 963)
• Pages: 506-510
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.506
• Online since: July 2019
• Authors: Michael Schneider*, Laura Stöber, Jens P. Konrath, Florian Patocka, Ulrich Schmid
• Keywords: Arrhenius Plot, Ion Bombardment, Ion Sputter Etching, Molybdenum Nitride, Preconditioning, Richardson Model, Schottky Barrier Height, Schottky Diode, SiC-MOSFET, Silicon Carbide

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