Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes

Xiang Zhou; Gyanesh Pandey; Reza Ghandi; Peter A. Losee; Alexander Bolotnikov; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.963.516

Paper Titles

Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC
p.498

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
p.502

Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights
p.506

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis
p.511

Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes
p.516

Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher
p.520

High-Efficiency Planarization of SiC Wafers by Water-CARE (Catalyst-Referred Etching) Employing Photoelectrochemical Oxidation
p.525

Impact of Subsurface Damage on SiC Wafer Shape
p.530

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars
p.539

HomeMaterials Science ForumMaterials Science Forum Vol. 963Deep Level Transient Spectroscopy (DLTS) Study of...

Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes

Abstract:

We have studied capacitance mode Deep Level Transient Spectroscopy (DLTS) of five 4H-SiC Schottky diode and PiN diode designs. Comparing with previous DLTS studies, we have identified four traps levels, Z_1/2, EH₁, EH₃ and EH₅. Additionally, a new trap level, EH₁, is prominent in blanket Al⁺ and B⁺ high-energy implanted samples but less so in mask-implanted samples. Al⁺ implantation increases EH₃ (associated with silicon vacancy) and EH₅, while B⁺ implantation significantly reduces EH₃. The Z_1/2 peak (associated with carbon vacancy) is reduced to very low levels after B⁺ and Al⁺ implantation.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2018

View Preview

Info:

Periodical:

Materials Science Forum (Volume 963)

Pages:

516-519

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.516

Citation:

Cite this paper

Online since:

July 2019

Authors:

Xiang Zhou, Gyanesh Pandey, Reza Ghandi, Peter A. Losee, Alexander Bolotnikov, T. Paul Chow*

Keywords:

4H-SiC, Deep Level Transient Spectroscopy (DLTS), Diode, High Energy Implantation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] R. Kosugi et al., First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method,, Proc. Int. Symp. Power Semicond. Devices ICs, Jun. 2014, p.346–349.

DOI: 10.1109/ispsd.2014.6856047

Google Scholar

[2] R. Ghandi, P. Losee, A. Bolotnikov, and D. Lilienfeld, Fabrication of 2.5kV 4H-SiC PiN diodes with high energy implantation (> 12MeV) of Al + and B +,, Mater. Sci. Forum, vol. 924, p.573–576, Jun. (2018).

DOI: 10.4028/www.scientific.net/msf.924.573

Google Scholar

[3] A. Bolotnikov, P. Losee, R. Ghandi, S. Kennerly, R. Datta, and X. She, SiC charge-balanced devices offering breakthrough performance surpassing the 1-D Ron versus BV limit,, Proc. 12th Eur. Conf. Silicon Carbide Relat. Mater., Sep. 2018, p.1362.

DOI: 10.4028/www.scientific.net/msf.963.655

Google Scholar

[4] T. Dalibor, G. Pensl, H. Matsunami et al., Deep defect centers in silicon carbide monitored with deep level transient spectroscopy,, Phys. Stat. Sol. (a), vol. 162, no. 1, p.199–225, Jul. (1997).

DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Google Scholar

[5] Ž. Pastuović, R. Siegele, I. Capan, T. Brodar, S. I. Sato, and T. Ohshima, Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime,, J. Phys. Condens. Matter, vol. 29, no. 47, p.475701, Nov. (2017).

DOI: 10.1088/1361-648x/aa908c

Google Scholar

[6] C. Hemmingsson et al., Capacitance transient studies of electron irradiated 4H-SiC,, Mater. Sci. Eng. B, vol. 46, no. 1–3, p.336–339, Apr. (1997).

DOI: 10.1016/s0921-5107(96)01999-x

Google Scholar