Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

Keisuke Kurashima; Ryohei Kawasaki; Kenta Irikura; Shogo Okuyama; Hitoshi Habuka; Yoshinao Takahashi; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.963.520

Paper Titles

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
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Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights
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Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis
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Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes
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Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher
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High-Efficiency Planarization of SiC Wafers by Water-CARE (Catalyst-Referred Etching) Employing Photoelectrochemical Oxidation
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Impact of Subsurface Damage on SiC Wafer Shape
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Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars
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Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Chlorine Trifluoride Gas Distributor Design for...

Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

Abstract:

The etching rate profile over the 50-mm diameter single-crystalline C-face 4H-SiC wafer by ClF₃ gas was numerically evaluated by means of the numerical calculation accounting for the transport phenomena. The etching rate uniformity is expected to be improved by means of adjusting the pinhole diameter and their arrangement of the gas distributor.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

520-524

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.520

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Online since:

July 2019

Authors:

Keisuke Kurashima, Ryohei Kawasaki, Kenta Irikura, Shogo Okuyama, Hitoshi Habuka*, Yoshinao Takahashi, Tomohisa Kato

Keywords:

Chlorine Trifluoride Gas, Etching Rate Profile, Silicon Carbide Dry Etcher

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References

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