Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes

Siddarth G. Sundaresan; Vamsi Mulpuri; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.963.544

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Surge Current and Avalanche Robustness of...

Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes

Abstract:

This paper investigates the 10 ms surge current (I_FSM) and single-pulse avalanche energy (E_AS) limits of 1200 V/10 A SiC Schottky rectifiers from several commercial vendors. GeneSiC’s 1200 V/10 A diode recorded maximum I_FSM values of 162 A at T_C=25°C and 135 A at T_C=150°C, which were the highest amongst investigated devices. The diode sustains junction temperatures as high as 910°C during surge current operation, which results in eventual failure of the Aluminum based metallization.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

544-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.544

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Online since:

July 2019

Authors:

Siddarth G. Sundaresan*, Vamsi Mulpuri, Ranbir Singh

Keywords:

Avalanche Robustness, High-Current, High-Voltage, Schottky Diode, Surge Current

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References

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