Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes

Yi Dan Tang; Sheng Xu Dong; Yun Bai; Cheng Yue Yang; Chengzhan Li; Xin Yu Liu

doi:10.4028/www.scientific.net/MSF.963.562

Paper Titles

Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes
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The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes
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On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry
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Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes
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Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes
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Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
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Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode
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Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Mechanisms and Characteristics of Large-Area...

Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes

Abstract:

Mechanisms and characteristics of optimized main junction for 4H-SiC trench junction barrier Schottky (T_MJBS) diodes were investigated by theories and experiments. From these simulation and experimental values, we can conclude that T_MJBS device has better reverse performance, such as the best reverse blocking capability and lowest reverse surface leakage current than the conventional JBS and TJBS device while maintaining good forward characteristics. Furthermore, The large area T_MJBS Diodes with high current density show the better reverse characteristics than the small area one at an acceptable forward characteristics. The T_MJBS structure can significantly reduce the influence of the Schottky interface and is more suitable for manufacturing high current density and large area devices.

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Materials Science Forum (Volume 963)

Pages:

562-566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.562

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Online since:

July 2019

Authors:

Yi Dan Tang*, Sheng Xu Dong, Yun Bai, Cheng Yue Yang, Chengzhan Li, Xin Yu Liu

Keywords:

4H-SiC, Leakage Current, Reverse Blocking Capability, Schottky Interface, T_MJBS

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References

[1] Roccaforte F, Giannazzo F, et al, J. Appl Surf Sci (2010) 256-572.

Google Scholar

[2] Fanny Dahlquist, Junction Barrier Schottky Rectifiers in Silicon Carbide (KTH, Royal Institute of Technology, Stockholm, 2002) pp.16-25.

Google Scholar

[3] Baliga, B.J, Fundamentals of Power Semiconductor Devices (Springer Science + Business Media, LLC, 2008) pp.168-197.

Google Scholar

[4] Lin Zhu and T. Paul Chow, IEEE Transactions on Electron Devices 55(8). (2008) 1857-1863.

Google Scholar

[5] Rahul Radhakrishnan and Jian H. Zhao, Solid-State Electronics 63 (2011) 167-176.

Google Scholar

[6] Yidan Tang, Xinyu Liu, et al, Mater. Sci. Forum, Vol. 924 (2018) 589-592.

Google Scholar

[7] Na Ren and Kuang Sheng, IEEE Transactions on Electron Devices 61(12) (2014) 4158-4165.

Google Scholar

[8] T. Nakamura, M.Aketa, Y.Nakano, et al., Electron Devices Meeting 12 (2011) 26.5.1-26.5.3.

Google Scholar

[9] Na Ren, Kuang Sheng, et al, IEEE Transactions on Electron Devices 61(7) (2014) 2459-2465.

Google Scholar

[10] Dallas T.Morisette, James A.Cooper, IEEE Transactions on Electron Devices 48(2) (2001) 349-352.

Google Scholar

[11] SONG QingWen, YUAN Hao, et al, Sci China Tech Sci 15 (2015) 5882:1-4.

Google Scholar

[12] Salvatore Bellone, Luigi Di Benedetto, et al, Solid-State Electronics 120 (2016) 6-12.

Google Scholar